The latest development of multi-purpose crystalline silicon in the United States

Abstract A team from the Center for Nano Engineering Research (CRNE) and the Department of Electrical Engineering at the University of Barcelona has introduced a groundbreaking, more cost-effective, and efficient method for producing crystalline silicon. Their findings were recently published in the latest edition of the *Journal of Applied Physics*. This innovative technique allows for the creation of extremely thin silicon wafers—just around 10 microns thick—which are highly sought after in microelectronics, particularly with the rapid development of three-dimensional integrated circuits. The advancement in silicon technology also opens new possibilities for photovoltaic applications, especially in the field of flexible energy storage systems.


In recent years, there has been a clear trend toward thinner silicon wafers. The thinnest available through traditional wire-cutting methods is approximately 150 microns. However, achieving even thinner wafers using this method becomes increasingly challenging, and a significant portion of the material is lost during the process. In contrast, the CRNE team's approach offers a single-step fabrication process that is not only faster and more efficient but also significantly reduces costs. The method involves creating a large number of microscopic pores on the surface of the material, which are then expanded under high-temperature conditions. These pores are precisely controlled in terms of size and shape, allowing for accurate regulation of both the thickness and the number of wafers produced. This results in a layered structure that can be easily separated using a blade-like tool. With this technique, scientists can divide a 300 mm thick wafer into up to 10 thinner wafers, each ranging between 5 and 7 mm in thickness. Reducing the Cost of Industrial Production

The demand for ultra-thin silicon wafers is growing rapidly, especially in the MEMS industry and solar energy sector. Traditional cutting methods have reached a point where further reductions in thickness are becoming increasingly difficult, despite improvements in efficiency and cost reduction over the past few decades. The new method developed by the research group addresses this challenge effectively. Even at a thickness of just a few tens of micrometers, the wafers maintain their ability to absorb sunlight and convert it into electricity, making them highly suitable for next-generation photovoltaic technologies. This innovation could significantly impact the future of semiconductor manufacturing and renewable energy systems.

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